Professor Heejun YANG’s research team (Energy Science) developed a terabit memory device using two-dimensional material graphene and h-BN. It is economic, super-fast and non-volatile.
This research has been conducted under the project of Samsung Research Funding & Incubation Center for Future Technology and it was posted on the “Nature Communications” on July 18th.
Title: Self-selective van der Waals heterostructures for large scale memory array
Authors: Prof. Heejun YANG (SKKU), Ron gZhao (SUTD, Singapore), Linfeng Sun (SKKU), Yishu Zhang (SUTD)
In order to process the future technology such as IoT and AI, the development of a new memory was essential. Researchers had been trying to develop memory (PRAM, RRAM) using various types of materials other than silicon, but there were many technical barriers that they have to overcome.
In this research the researcher used two-dimensional material such as graphen and h-BN to develop self-selective memory, which can perform efficiently without the use of transistor. It made use of the mechanical and electrical characteristic of graphene and the quantum tunneling characteristic of h-BN to create a totally new type of memory.
Prof. YANG said, “The development of this memory will lead the industry in the new era. This is the first case to use two-dimensional material to enhance and replace the original transistor of the memory.”
[Figure 1] shows the structure and characteristics of the self-selective memory
[Figure 2] proved that the performance of the memory is maintained 6 months after saving “SKKU” using 144 memory devices
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